S34ML04G200BHB000

Product Specifications of S34ML04G200BHB000 

•  Memory Type: FLASH - NAND

•  Memory Size: 4Gbit

•  Memory Organization: 512M x 8

•  Memory Interface: Parallel

•  Write Cycle Time - Word, Page: 25ns

•  Voltage - Supply: 2.7V ~ 3.6V

•  Operating Temperature: -40°C ~ 105°C (TA)

•  Mounting Type: Surface Mount

•  Package / Case: 63-BGA (11x9)

•  Supplier Device Package: 63-BGA (11x9)

Product Overview of S34ML04G200BHB000 

The S34ML04G200BHB000 is a 4Gbit NAND Flash memory chip that provides high-density, non-volatile storage with a parallel interface. It features a write cycle time of 25 ns, making it suitable for applications requiring fast and reliable data storage. The chip operates within a voltage supply range of 2.7V to 3.6V and can function in a wide operating temperature range, making it versatile for various applications. It is packaged in a 63-BGA (11x9) for surface mounting.

Application Range of S34ML04G200BHB000 

This NAND Flash memory chip is designed for use in:

•  High-performance computing systems

•  Consumer electronics requiring robust memory solutions

•  Automotive electronics with extreme temperature demands

•  Industrial control systems needing durable and reliable data storage

Common Q&A of S34ML04G200BHB000 

Q: What is the advantage of using NAND Flash memory?

A: NAND Flash memory provides high-density storage with fast read and write capabilities, making it ideal for a wide range of electronic devices.

Q: Can this memory chip handle high-temperature industrial environments?

A: Yes, with an operating temperature range of -40°C to 105°C, it is well-suited for industrial applications that may experience extreme temperatures.

Q: Is the S34ML04G200BHB000 suitable for automotive applications?

A: Absolutely, its robust design and temperature tolerance make it ideal for the demanding conditions found in automotive electronics.