S34MS01G104BHB080

Product Specifications of S34MS01G104BHB080 

•  Memory Type: FLASH - NAND

•  Memory Size: 1Gbit

•  Memory Organization: 64M x 16

•  Memory Interface: Parallel

•  Write Cycle Time - Word, Page: 45ns

•  Access Time: 45 ns

•  Voltage - Supply: 1.7V ~ 1.95V

•  Operating Temperature: -40°C ~ 105°C (TA)

•  Mounting Type: Surface Mount

•  Package / Case: 63-BGA (11x9)

•  Supplier Device Package: 63-BGA (11x9)

Product Overview of S34MS01G104BHB080 

The S34MS01G104BHB080 is a 1Gbit NAND Flash memory chip that offers high-density, non-volatile storage with a parallel interface. It features a write cycle time and access time of 45 ns, ensuring efficient performance for a wide range of applications. The chip operates within a voltage supply range of 1.7V to 1.95V and can function in a wide operating temperature range, making it versatile for various applications. It is packaged in a 63-BGA (11x9) for surface mounting.

Application Range of S34MS01G104BHB080 

This NAND Flash memory chip is designed for use in:

•  Consumer electronics that require large amounts of data storage

•  Industrial control systems where data integrity and speed are crucial

•  Automotive electronics that need durable and reliable memory solutions

•  Communication devices with high data throughput needs

Common Q&A of S34MS01G104BHB080 

Q: What is the advantage of using NAND Flash memory?

A: NAND Flash memory offers high-density storage with fast read and write capabilities, making it ideal for a wide range of electronic devices.

Q: Can this memory chip handle extreme temperatures?

A: Yes, with an operating temperature range of -40°C to 105°C, it is well-suited for environments that experience a wide range of temperatures.

Q: Is the S34MS01G104BHB080 suitable for automotive applications?

A: Absolutely, its robust design and temperature tolerance make it ideal for the demanding conditions found in automotive electronics.