Cypress Semiconductor Corp
DescriptionIC FLASH 1GBIT PARALLEL 63BGA
PackageTray
Stock1000
Priceactive
Download• Memory Type: FLASH - NAND
• Memory Size: 1Gbit
• Memory Organization: 64M x 16
• Memory Interface: Parallel
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45 ns
• Voltage - Supply: 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-BGA (11x9)
• Supplier Device Package: 63-BGA (11x9)
The S34MS01G104BHB080 is a 1Gbit NAND Flash memory chip that offers high-density, non-volatile storage with a parallel interface. It features a write cycle time and access time of 45 ns, ensuring efficient performance for a wide range of applications. The chip operates within a voltage supply range of 1.7V to 1.95V and can function in a wide operating temperature range, making it versatile for various applications. It is packaged in a 63-BGA (11x9) for surface mounting.
This NAND Flash memory chip is designed for use in:
• Consumer electronics that require large amounts of data storage
• Industrial control systems where data integrity and speed are crucial
• Automotive electronics that need durable and reliable memory solutions
• Communication devices with high data throughput needs
Q: What is the advantage of using NAND Flash memory?
A: NAND Flash memory offers high-density storage with fast read and write capabilities, making it ideal for a wide range of electronic devices.
Q: Can this memory chip handle extreme temperatures?
A: Yes, with an operating temperature range of -40°C to 105°C, it is well-suited for environments that experience a wide range of temperatures.
Q: Is the S34MS01G104BHB080 suitable for automotive applications?
A: Absolutely, its robust design and temperature tolerance make it ideal for the demanding conditions found in automotive electronics.
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