S34MS01G104BHI910

Product Specifications of S34MS01G104BHI910

•  Memory Type: FLASH - NAND

•  Memory Size: 1Gbit

•  Memory Organization: 64M x 16

•  Memory Interface: Parallel

•  Access Time: 45 ns

•  Voltage - Supply: 1.7V ~ 1.95V

•  Operating Temperature: -40°C ~ 85°C

•  Mounting Style: SMD/SMT

•  Package / Case: BGA-63

Product Overview of S34MS01G104BHI910

The S34MS01G104BHI910 is a 1Gbit NAND Flash memory chip that offers high-density, non-volatile storage with a parallel interface. It features an access time of 45 ns and operates within a voltage supply range of 1.7V to 1.95V. The chip is designed for surface mounting in a BGA-63 package and can function in a wide operating temperature range, making it suitable for various demanding applications.

Application Range of S34MS01G104BHI910

This NAND Flash memory chip is ideal for:

•  Embedded systems requiring large, non-volatile memory storage

•  High-performance computing applications

•  Consumer electronics that need robust data retention

•  Automotive and industrial applications with extreme temperature requirements

Common Q&A of S34MS01G104BHI910

Q: What is the advantage of NAND Flash memory?

A: NAND Flash offers fast read and write speeds, high density, and non-volatile storage, making it ideal for a wide range of electronic devices.

Q: How does the operating temperature affect the memory chip?

A: The wide operating temperature range ensures that the memory chip can function reliably in various environmental conditions, from industrial settings to outdoor applications.

Q: Can this chip be used in mobile devices?

A: Yes, its compact BGA packaging and power efficiency make it suitable for mobile devices.