S34MS04G100BHB000

S34MS04G100BHB000
Manufacturer

Cypress Semiconductor Corp

Description

IC FLASH 4GBIT PARALLEL 63BGA

Package

Tray

Stock

1000

Price

active

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S34MS04G100BHB000.pdf

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Product Attributes

Product Specifications of S34MS04G100TFI900 

•  Memory Type: NAND Flash


•  Memory Size: 4 Gbit


•  Memory Organization: 512 M x 8


•  Memory Interface: Parallel


•  Access Time: 45 ns


•  Supply Voltage - Min: 1.7 V


•  Supply Voltage - Max: 1.95 V


•  Operating Temperature: -40 C to +85 C


•  Mounting Style: SMD/SMT


•  Package / Case: TSOP-48


Product Overview of S34MS04G100TFI900 

The S34MS04G100TFI900 is a 4 Gbit NAND Flash memory chip with a parallel interface, offering a standard access time of 45 ns. It operates within a supply voltage range of 1.7 V to 1.95 V and can withstand operating temperatures from -40 C to +85 C. Its TSOP-48 package is designed for surface-mounted technology applications.


Application Range of S34MS04G100TFI900 

This NAND Flash memory chip is suitable for a broad array of applications, including but not limited to:

•  Embedded systems


•  Consumer electronics


•  Communication devices


•  Automotive electronics


Common Q&A of S34MS04G100TFI900 

Q: What is the endurance of this NAND Flash memory chip?

A: NAND Flash memory chips are known for their high endurance. For specific endurance ratings, please refer to the manufacturer's datasheet.


Q: Can this memory chip be used in high-temperature environments?

A: Yes, it is designed to operate in temperatures ranging from -40 C to +85 C, making it suitable for high-temperature environments.


Q: Is the S34MS04G100TFI900 suitable for automotive applications?

A: Absolutely, its robust design and temperature tolerance make it ideal for use in the demanding conditions of automotive electronics.


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