S34MS01G200GHI003

Product Specifications of S34MS01G200GHI003 

•  Memory Type: Non-Volatile FLASH - NAND

•  Memory Size: 1Gbit

•  Memory Organization: 128M x 8

•  Memory Interface: Parallel

•  Write Cycle Time - Word, Page: 45ns

•  Access Time: 45 ns

•  Voltage - Supply: 1.7V ~ 1.95V

•  Operating Temperature: -40°C ~ 85°C (TA)

•  Mounting Type: Surface Mount

•  Package / Case: 67-VFBGA

•  Supplier Device Package: 67-BGA (8x6.5)

Product Overview of S34MS01G200GHI003 

The S34MS01G200GHI003 is a high-performance 1Gbit NAND Flash memory chip designed for high-speed and reliable data storage. Manufactured by Cypress Semiconductor Corp, it operates on a parallel interface with a quick access time of 45 ns, making it suitable for a wide range of applications that require fast and non-volatile memory solutions.

Application Range of S34MS01G200GHI003 

This NAND Flash memory chip is ideal for use in:

•  Embedded systems

•  Digital cameras

•  Solid-state drives

•  Networking and telecommunications equipment

•  Industrial automation systems

Common Q&A of S34MS01G200GHI003 

Q: What is the operating voltage range for this memory chip?

A: The operating voltage range is 1.7V to 1.95V.

Q: Is this product suitable for high-temperature environments?

A: Yes, it can operate in temperatures ranging from -40°C to 85°C.