MB85R256FPF-G-BND-ERE1

MB85R256FPF-G-BND-ERE1 Product Description

Product Specifications of MB85R256FPF-G-BND-ERE1

•  Product Name: MB85R256FPF-G-BND-ERE1

•  Product Type: FLASH - F-RAM Memory IC

•  Manufacturer: Fujitsu Semiconductor

•  Package: 28-TSOP

•  Interface: Parallel

•  Density: 256Kbit

•  Voltage: 2.7V ~ 3.6V

•  Operating Temperature: -40°C ~ 85°C

•  Features: Non-volatile, High endurance, Low power consumption

Product Introduction of MB85R256FPF-G-BND-ERE1

MB85R256FPF-G-BND-ERE1 is a high-performance and reliable F-RAM (Ferroelectric Random Access Memory) IC that offers 256Kbit of storage capacity in a compact 28-TSOP package. It uses the ferroelectric process technology, which stores data by changing the polarization state of a ferroelectric material, resulting in non-volatile, high endurance, and low power consumption characteristics. MB85R256FPF-G-BND-ERE1 supports the parallel interface, which allows the host system to access the F-RAM as a linear array of bytes, without worrying about the sector or page boundaries.

MB85R256FPF-G-BND-ERE1 can operate with a wide range of supply voltage from 2.7V to 3.6V, and has a fast access time of 70ns. It can endure 10^14 read/write cycles, which is far superior to other non-volatile memory technologies such as EEPROM or flash memory. Moreover, MB85R256FPF-G-BND-ERE1 has a low power consumption of 0.1mA (typical) for read operation and 0.3mA (typical) for write operation, making it suitable for battery-powered applications.

Product Application Scope of MB85R256FPF-G-BND-ERE1

MB85R256FPF-G-BND-ERE1 is suitable for various applications that require non-volatile, high-reliability, and low-power F-RAM memory, such as:

•  Industrial and automotive systems

•  Metering and measurement devices

•  Data logging and backup devices

•  Security and authentication devices

•  Medical and healthcare devices

Frequently Asked Questions of MB85R256FPF-G-BND-ERE1

•  Q: What is the difference between MB85R256FPF-G-BND-ERE1 and MB85R256GPF-G-BND-ERE1?

•  A: MB85R256FPF-G-BND-ERE1 and MB85R256GPF-G-BND-ERE1 are both 256Kbit F-RAM memory ICs from Fujitsu Semiconductor, but they have different package types. MB85R256FPF-G-BND-ERE1 is in a 28-TSOP package, while MB85R256GPF-G-BND-ERE1 is in a 48-TSOP package. They have the same specifications and performance, and are interchangeable in most applications.