S34MS02G200GHV003

S34MS02G200GHV003
Manufacturer

Cypress Semiconductor Corp

Description

IC FLASH 2GBIT PARALLEL 67BGA

Package

Tape & Reel (TR)

Stock

1000

Price

active

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S34MS02G200GHV003.pdf

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Product Attributes

Product Details of S34MS02G200GHV003

Product Parameters of S34MS02G200GHV003

•  Manufacturer: SkyHigh Memory Limited


•  Series: MS-1


•  Memory Type: Non-Volatile


•  Memory Format: FLASH


•  Technology: FLASH - NAND


•  Memory Size: 2Gbit


•  Memory Organization: 128M x 16


•  Memory Interface: Parallel


•  Access Time: 45 ns


•  Voltage - Supply: 1.7V ~ 1.95V


•  Operating Temperature: -40°C ~ 105°C (TA)


•  Mounting Type: Surface Mount


•  Package / Case: 67-VFBGA


•  Supplier Device Package: 67-BGA (8x6.5)


Product Introduction of S34MS02G200GHV003

S34MS02G200GHV003 is a FLASH - NAND memory IC with 2Gbit capacity and parallel interface. It is designed for high-performance and high-reliability applications that require fast read and write operations, such as embedded systems, consumer electronics, and industrial devices. S34MS02G200GHV003 features a 45 ns access time, a 1.7V ~ 1.95V supply voltage range, and a -40°C ~ 105°C operating temperature range. It is packaged in a 67-BGA (8x6.5) form factor, which offers a small footprint and easy soldering.


Product Application Scope of S34MS02G200GHV003

S34MS02G200GHV003 can be used in various applications that require large-capacity and high-speed non-volatile memory, such as:


•  Digital cameras


•  MP3 players


•  GPS devices


•  Smartphones


•  Tablets


•  Set-top boxes


•  Solid state drives


•  Printers


•  Automotive systems


•  Medical devices


•  Industrial controllers


Common Questions and Answers of S34MS02G200GHV003

•  Q: What is the difference between FLASH - NAND and FLASH - NOR memory?


•  A: FLASH - NAND and FLASH - NOR are two types of FLASH memory technologies that differ in their cell structure and operation. FLASH - NAND has a series connection of memory cells, which allows for higher density, lower cost, and faster write and erase operations. However, it also has lower endurance, higher power consumption, and slower read operations. FLASH - NOR has a parallel connection of memory cells, which allows for faster read operations, lower power consumption, and higher endurance. However, it also has lower density, higher cost, and slower write and erase operations.


•  Q: How can I interface S34MS02G200GHV003 with a microcontroller or a processor?


•  A: S34MS02G200GHV003 has a parallel interface that consists of 8 data pins, 5 address pins, 3 control pins, and 2 power pins. You can connect these pins to the corresponding pins of your microcontroller or processor, and use the control signals to perform read and write operations. You can also use a memory controller or a FLASH controller to simplify the interface and improve the performance.


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